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| APT20M120JCU2 ISOTOP(R) Boost chopper MOSFET + SiC chopper diode Power module K VDSS = 1200V RDSon = 560m typ @ Tj = 25C ID = 20A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features D G * S Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated S D K * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration G ISOTOP(R) Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Max ratings 1200 20 15 104 30 672 543 14 Unit V A V m W A September, 2009 1-5 APT20M120JCU2 - Rev 0 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APT20M120JCU2 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1200V VGS = 0V Tj = 125C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 672 5 100 Unit A m V nA 3 560 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 14A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 14A RG = 2.2 Min Typ 7736 715 92 300 50 140 50 31 170 48 ns nC Max Unit pF SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 32 56 10 1.6 2.3 80 96 69 Max 200 1000 1.8 3 Unit V A A V nC pF IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Mosfet SiC Diode 2500 -40 Typ Max 0.23 1.65 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 29.2 www.microsemi.com 2-5 APT20M120JCU2 - Rev 0 September, 2009 Thermal and package characteristics APT20M120JCU2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Cathode Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Source Dimensions in Millimeters and (Inches) Gate Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.9 0.2 0.7 0.15 0.5 0.1 0.05 0.3 0.1 0.05 Single P ulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) September, 2009 www.microsemi.com 3-5 APT20M120JCU2 - Rev 0 APT20M120JCU2 Low Voltage Output Characteristics 40 VGS=10V 30 ID, Drain Current (A) 25 Low Voltage Output Characteristics TJ=125C ID, Drain Current (A) 30 TJ=25C VGS=6, 7, 8 & 9V 20 15 10 5 0 4.5V 5V 20 TJ=125C 10 0 0 5 10 15 20 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) Transfert Characteristics 20 ID, Drain Current (A) 16 12 8 TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150 VGS=10V ID=14A 4 0 0 1 2 3 4 5 6 TJ, Junction Temperature (C) Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 VDS=600V VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000 C, Capacitance (pF) Ciss 10 8 6 4 2 0 0 ID=14A TJ=25C VDS=240V 1000 Coss VDS=960V 100 Crss 10 40 80 120 160 200 240 280 320 Gate Charge (nC) 0 50 100 150 200 September, 2009 4-5 APT20M120JCU2 - Rev 0 VDS, Drain to Source Voltage (V) www.microsemi.com APT20M120JCU2 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.3 0.7 0.5 0.9 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100 TJ=25C 20 IF Forward Current (A) 16 TJ=75C IR Reverse Current (A) 75 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage TJ=125C 50 TJ=75C TJ=125C TJ=175C TJ=25C 25 TJ=175C 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) 700 C, Capacitance (pF) 600 500 400 300 200 100 0 September, 2009 5-5 APT20M120JCU2 - Rev 0 1 10 100 VR Reverse Voltage 1000 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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